Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer - ScienceDirect
Improve power thyristor and diode performance with proton irradiation - EDN
THz Detection Using p+/n-Well Diodes Fabricated in 45-nm CMOS | Semantic Scholar
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Diode - an overview | ScienceDirect Topics
Diode - an overview | ScienceDirect Topics
Diode - an overview | ScienceDirect Topics
ALSTOM Power Systems SA
Diode - an overview | ScienceDirect Topics
Diode - an overview | ScienceDirect Topics
Diode - an overview | ScienceDirect Topics
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Diode - an overview | ScienceDirect Topics
Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer - ScienceDirect
Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer - ScienceDirect
THz Detection Using p+/n-Well Diodes Fabricated in 45-nm CMOS | Semantic Scholar
THz Detection Using p+/n-Well Diodes Fabricated in 45-nm CMOS | Semantic Scholar
Diode - an overview | ScienceDirect Topics
Diode - an overview | ScienceDirect Topics
Blog - The evolution of diodes - Diverse Electronics
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Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer - ScienceDirect
Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions | Nature Communications
Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions | Nature Communications
