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레오콤 한국 블로그 - www.leocom.kr :: 2015/01/06 글 목록 (5 Page)
레오콤 한국 블로그 - www.leocom.kr :: 2015/01/06 글 목록 (5 Page)

State of the art two-dimensional materials-based photodetectors: Prospects,  challenges and future outlook - ScienceDirect
State of the art two-dimensional materials-based photodetectors: Prospects, challenges and future outlook - ScienceDirect

Argon Bombardment of 4H Silicon Carbide Substrates for Tailored Schottky  Diode Barrier Heights | Scientific.Net
Argon Bombardment of 4H Silicon Carbide Substrates for Tailored Schottky Diode Barrier Heights | Scientific.Net

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10. Noise and active RF components - ppt video online download
10. Noise and active RF components - ppt video online download

레오콤 한국 블로그 - www.leocom.kr :: 2015/01/06 글 목록 (5 Page)
레오콤 한국 블로그 - www.leocom.kr :: 2015/01/06 글 목록 (5 Page)

Fabrication and Characterization of Gallium Nitride Schottky Diode Devices  for Determination of Electron-Hole Pair Creation Ener
Fabrication and Characterization of Gallium Nitride Schottky Diode Devices for Determination of Electron-Hole Pair Creation Ener

Electronics in Motion and Conversion March 2014
Electronics in Motion and Conversion March 2014

Argon Bombardment of 4H Silicon Carbide Substrates for Tailored Schottky  Diode Barrier Heights | Scientific.Net
Argon Bombardment of 4H Silicon Carbide Substrates for Tailored Schottky Diode Barrier Heights | Scientific.Net

PDF) Radiation hardness after very high neutron irradiation of minimum  ionizing particle detectors based on 4H-SJC p +n junctions
PDF) Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SJC p +n junctions

Service Manual GSM SM-T210 | PDF | Electrostatic Discharge | Electricity
Service Manual GSM SM-T210 | PDF | Electrostatic Discharge | Electricity

Effects of measurement temperature and metal thickness on Schottky diode  characteristics - ScienceDirect
Effects of measurement temperature and metal thickness on Schottky diode characteristics - ScienceDirect

레오콤 한국 블로그 - www.leocom.kr :: 2015/01/06 글 목록 (5 Page)
레오콤 한국 블로그 - www.leocom.kr :: 2015/01/06 글 목록 (5 Page)

Doped Ru to enable next generation barrier-less interconnect: Journal of  Applied Physics: Vol 132, No 17
Doped Ru to enable next generation barrier-less interconnect: Journal of Applied Physics: Vol 132, No 17

Effects of measurement temperature and metal thickness on Schottky diode  characteristics - ScienceDirect
Effects of measurement temperature and metal thickness on Schottky diode characteristics - ScienceDirect

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Current-voltage-measurement temperature characteristics depending on the  barrier-forming contact metal thickness in Au/Cu/n-Si/Au–Sb/Ni rectifying  contacts - ScienceDirect
Current-voltage-measurement temperature characteristics depending on the barrier-forming contact metal thickness in Au/Cu/n-Si/Au–Sb/Ni rectifying contacts - ScienceDirect

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#182

Agilent RF and Microwave Test Accessories - 4test
Agilent RF and Microwave Test Accessories - 4test

Pack of 5 LTC4151HDD#PBF IC PWR MONITOR MS 80V SD 10PIN DFN - Walmart.com
Pack of 5 LTC4151HDD#PBF IC PWR MONITOR MS 80V SD 10PIN DFN - Walmart.com

2AAT010B Wireless Power Bank Parts List/Tune Up Info G99-AAT010B-C001  fcc.xls Channel Well Technology
2AAT010B Wireless Power Bank Parts List/Tune Up Info G99-AAT010B-C001 fcc.xls Channel Well Technology

Research output
Research output

Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS  Analysis | Scientific.Net
Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis | Scientific.Net

Effects of measurement temperature and metal thickness on Schottky diode  characteristics - ScienceDirect
Effects of measurement temperature and metal thickness on Schottky diode characteristics - ScienceDirect