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Ultrabroadband and High-Detectivity Photodetector Based on WS2/Ge Heterojunction through Defect Engineering and Interface Passivation | ACS Nano
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![PDF) Parallel-Perpendicular Kinetic Energy Coupling Effect on Electron Tunneling Currents in Al∕HfO[sub 2]∕p-Ge and Al∕SiO[sub 2]∕p-Si MOS Diodes with Nanometer-Thick Oxides | Seiichi Miyazaki - Academia.edu](https://0.academia-photos.com/attachment_thumbnails/40164522/mini_magick20190221-28315-1rxisjv.png?1550803658 "PDF) Parallel-Perpendicular Kinetic Energy Coupling Effect on Electron Tunneling Currents in Al∕HfO[sub 2]∕p-Ge and Al∕SiO[sub 2]∕p-Si MOS Diodes with Nanometer-Thick Oxides | Seiichi Miyazaki - Academia.edu")