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InGaN light-emitting diodes: Efficiency-limiting processes at high injection: Journal of Vacuum Science & Technology A: Vol 31, No 5
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Improvement of Radiative Recombination Rate and Efficiency Droop of InGaN Light Emitting Diodes with In‐Component‐Graded InGaN Barrier - Jia - 2021 - physica status solidi (a) - Wiley Online Library
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