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The structure of a the β-Ga2O3 MOSFET and b the β-Ga2O3 NCFET | Download Scientific Diagram
Development of world's first vertical gallium oxide transistor through ion implantation doping
Ge-doped β-Ga2O3 MOSFETs
A review of the most recent progresses of state-of-art gallium oxide power devices
The structure of the β-Ga2O3 MOSFET. | Download Scientific Diagram
High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge: Applied Physics Letters: Vol 110, No 14
Review—Recent Advances in Designing Gallium Oxide MOSFET for RF Application
A 800 V β‐Ga2O3 Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of Over 86.3 MW cm−2 - Feng - 2019 - physica status solidi (a) - Wiley Online Library
Press Release | First Demonstration of Gallium Oxide (Ga2O3) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) | NICT-National Institute of Information and Communications Technology
Current Aperture Vertical $\beta$ -Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping | Semantic Scholar
Passivation coating increases power capabilities of Ga2O3 semiconductor
New contacts enhance heteroepitaxial Ga2O3 MOSFETs - News
Crystals | Free Full-Text | β-Ga2O3-Based Power Devices: A Concise Review
RF performance evaluation of p-type NiO-pocket based β-Ga2O3/black phosphorous heterostructure MOSFET
Figure 1 from Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V | Semantic Scholar
First demonstration of vertical Ga2O3 MOSFET: Planar structure with a current aperture | Semantic Scholar
酸化ガリウム反転型DI-MOSFETの基本動作を確認:ノベルクリスタルテクノロジー - EE Times Japan
Ke Zeng at Stanford
Design and fabrication of field-plated normally off β-Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application: Applied Physics Letters: Vol 116, No 24
Powering up gallium oxide metal-oxide-semiconductor field-effect transistors
Applied Sciences | Free Full-Text | Enhancement-Mode Heterojunction Vertical β-Ga2O3 MOSFET with a P-Type Oxide Current-Blocking Layer
Passivation pushes gallium oxide transistor to over 8kV
Gallium Oxide Epiwafers
World's First Normally-Off Gallium-Oxide MOSFET Fabricated - News
Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs | Nanoscale Research Letters | Full Text
Researching | Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V
Atlas Simulation of a Wide Bandgap Gallium Oxide (Ga2O3) MOSFET - Silvaco
β-Ga2O3 material properties, growth technologies, and devices: a review | SpringerLink