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Rang Superficial Publicare gan 1200v copie Comun bum
1200V GaN-on-Si reaches 300mm wafers ...
Vertical GaN Advantages in the Industry - Power Electronics News
4 Market positioning of SiC and GaN Power devices [17] | Download Scientific Diagram
Buffers for GaN power on AlN substrate
Enkris' demonstrates CMOS-compatible high-voltage GaN-on-Si HEMT epi reaches 300mm
iGaNPower designed a first 1200V E-Mode GaN HemT
Odyessy Semi Reaches 1200V Rating on Vertical GaN Power Devices - Circuit Cellar
Odyssey readies 1200V vertical GaN to take on SiC ...
GaNPower Demonstrates Industry's First 1200 V Single-Die E-Mode GaN Power Devices – GaNPower
1200V GaN FET for 99% efficiency ...
Industry's first 1200V Half Bridge Module based on GaN technology
ULTRA-LOW LOSS 600V– 1200V GAN POWER TRANSISTORS FOR HIGH EFFICIENCY APPLICATIONS
NexGen Vertical GaN® | Gallium Nitride (GaN) Semiconductor | Power Device - NexGen Power Systems
트랜스폼, 99% 효율의 1200V GaN 트랜지스터 시연
Bosch to develop 1200V GaN process for automotive ...
New 1200V GaN Power Switch With Kevin Source Lead – GaNPower
Transphorm to Demo 99% Efficiency Power Switching Using GaN Power Transistor at ISPSD 2022 - EE Times Asia
VisIC Launches 1200 V GaN Devices | Electronics360
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1200V Rating Achieved on Vertical GaN Power Devices - Power Electronics News
Transphorm 1200V GaN Fet delivers 99% Efficient Switching - News
IV Works to develop 1200V GaN semiconductor material with US' Applied - ETNews
Epitaxial growth of GaN buffer layers demo-ed at Imec
Imec and AIXTRON Demonstrate 200 mm GaN Epitaxy on AIX G5+ C for 1200V Applications with Breakdown in Excess of 1800V | imec
Breakthrough result could pave way for GaN to enter into the SiC high voltage domain
SiC in Stock: 1200V, 21mΩ Baseplate-less SiC Six-Pack Module in Industry-Standard Footprint – GaN & SiC Tech Hub
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