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1200V GaN-on-Si reaches 300mm wafers ...
1200V GaN-on-Si reaches 300mm wafers ...

Vertical GaN Advantages in the Industry - Power Electronics News
Vertical GaN Advantages in the Industry - Power Electronics News

4 Market positioning of SiC and GaN Power devices [17] | Download  Scientific Diagram
4 Market positioning of SiC and GaN Power devices [17] | Download Scientific Diagram

Buffers for GaN power on AlN substrate
Buffers for GaN power on AlN substrate

Enkris' demonstrates CMOS-compatible high-voltage GaN-on-Si HEMT epi  reaches 300mm
Enkris' demonstrates CMOS-compatible high-voltage GaN-on-Si HEMT epi reaches 300mm

iGaNPower designed a first 1200V E-Mode GaN HemT
iGaNPower designed a first 1200V E-Mode GaN HemT

Odyessy Semi Reaches 1200V Rating on Vertical GaN Power Devices - Circuit  Cellar
Odyessy Semi Reaches 1200V Rating on Vertical GaN Power Devices - Circuit Cellar

Odyssey readies 1200V vertical GaN to take on SiC ...
Odyssey readies 1200V vertical GaN to take on SiC ...

GaNPower Demonstrates Industry's First 1200 V Single-Die E-Mode GaN Power  Devices – GaNPower
GaNPower Demonstrates Industry's First 1200 V Single-Die E-Mode GaN Power Devices – GaNPower

1200V GaN FET for 99% efficiency ...
1200V GaN FET for 99% efficiency ...

Industry's first 1200V Half Bridge Module based on GaN technology
Industry's first 1200V Half Bridge Module based on GaN technology

ULTRA-LOW LOSS 600V– 1200V GAN POWER TRANSISTORS FOR HIGH EFFICIENCY  APPLICATIONS
ULTRA-LOW LOSS 600V– 1200V GAN POWER TRANSISTORS FOR HIGH EFFICIENCY APPLICATIONS

NexGen Vertical GaN® | Gallium Nitride (GaN) Semiconductor | Power Device -  NexGen Power Systems
NexGen Vertical GaN® | Gallium Nitride (GaN) Semiconductor | Power Device - NexGen Power Systems

트랜스폼, 99% 효율의 1200V GaN 트랜지스터 시연
트랜스폼, 99% 효율의 1200V GaN 트랜지스터 시연

Bosch to develop 1200V GaN process for automotive ...
Bosch to develop 1200V GaN process for automotive ...

New 1200V GaN Power Switch With Kevin Source Lead – GaNPower
New 1200V GaN Power Switch With Kevin Source Lead – GaNPower

Transphorm to Demo 99% Efficiency Power Switching Using GaN Power  Transistor at ISPSD 2022 - EE Times Asia
Transphorm to Demo 99% Efficiency Power Switching Using GaN Power Transistor at ISPSD 2022 - EE Times Asia

VisIC Launches 1200 V GaN Devices | Electronics360
VisIC Launches 1200 V GaN Devices | Electronics360

Title of Presentation
Title of Presentation

1200V Rating Achieved on Vertical GaN Power Devices - Power Electronics News
1200V Rating Achieved on Vertical GaN Power Devices - Power Electronics News

Transphorm 1200V GaN Fet delivers 99% Efficient Switching - News
Transphorm 1200V GaN Fet delivers 99% Efficient Switching - News

IV Works to develop 1200V GaN semiconductor material with US' Applied -  ETNews
IV Works to develop 1200V GaN semiconductor material with US' Applied - ETNews

Epitaxial growth of GaN buffer layers demo-ed at Imec
Epitaxial growth of GaN buffer layers demo-ed at Imec

Imec and AIXTRON Demonstrate 200 mm GaN Epitaxy on AIX G5+ C for 1200V  Applications with Breakdown in Excess of 1800V | imec
Imec and AIXTRON Demonstrate 200 mm GaN Epitaxy on AIX G5+ C for 1200V Applications with Breakdown in Excess of 1800V | imec

Breakthrough result could pave way for GaN to enter into the SiC high  voltage domain
Breakthrough result could pave way for GaN to enter into the SiC high voltage domain

SiC in Stock: 1200V, 21mΩ Baseplate-less SiC Six-Pack Module in  Industry-Standard Footprint – GaN & SiC Tech Hub
SiC in Stock: 1200V, 21mΩ Baseplate-less SiC Six-Pack Module in Industry-Standard Footprint – GaN & SiC Tech Hub