東芝，GaN-MOSFETの信頼性を向上するプロセスを開発 | OPTRONICS ONLINE オプトロニクスオンライン
Practical considerations when comparing SiC and GaN in power applications - Elettronica Plus
Increasing gallium nitride MOSFET threshold voltage
GaNの歩留まり90%や、耐圧1200Vの縦型構造など新GaNパワーFET - セミコンポータル
業界最小の＋100V耐圧GaN FET、EPCがサーバー向け | 日経クロステック（xTECH）
Si vs. GaN vs. SiC: Which process and supplier are best for my power design? - EDN
GaN Transistor for Several Power Applications - Power Electronics News
GAN063-650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET | Nexperia
GaN-HEMTの特徴 | 半導体製品 | 新電元工業株式会社- Shindengen
900V 170mΩ Gallium Nitride (GaN) FET - Transphorm | Mouser
GaN transistor characteristics at elevated temperatures: Journal of Applied Physics: Vol 106, No 7
GaN Power Devices: Potential, Benefits, and Keys to Successful Use | Mouser
GaN power devices, Part 1: Principles
新しい耐圧200 VのeGaNデバイスは、成熟したシリコン・パワーMOSFETに比べて性能が2倍です
Digi-Key ElectronicsのGaN電源製品リソース | DigiKey
Efficient Power Conversion (EPC) Introduces 200 V Gallium Nitride Power Transistor 12 Times Smaller Than Equivalently Rated MOSFETS
PowerUP EXPO 2021: Fundamentals of GaN and SiC power devices
SiCおよびGaN半導体 | DigiKey
Rad-tolerant GaN FET handles 15 A, 900 V - Power Electronic Tips
GaN | Nexperia
Market analysis: "Who really requires GaN & SiC power devices ?"
EPC Increases Benchmark Performance Versus Silicon MOSFETs with Latest 100 V eGaN® FET Family | Business Wire
Electronics | Free Full-Text | Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability
Color online Cross section of the fabricated GaN MOSFET and MOS-HEMT. | Download Scientific Diagram
First' quasi-vertical gallium nitride trench MOSFET on six-inch silicon
