Figure 4 from Interaction between IGBT, diode and parasitic inductances during short-circuit type 3 | Semantic Scholar
IGBT with an anti-parallel diode. (a) Diode Turn off and Switch Turn on... | Download Scientific Diagram
IRGP4069D - Infineon Technologies
Transistor 600V SMPS Series N-Channel IGBT with Anti Parallel Hyperfast Diode 1075927050000 | eBay
TIDA-00195: what if we use IGBT with Anti-parallel diode for breaking ? - Simulation, hardware & system design tools forum - Simulation, hardware & system design tools - TI E2E support forums
Why diode is connected across IGBT and MOSFET? Body or Intrinsic Diode - ETechnoG
Discrete IGBT with Anti-Parallel Diode - Infineon Technologies
Why are diodes connected in antiparallel in IGBT and MOSFET? - Quora
IGBTs: Frequently Asked Questions (FAQs) | Electronic Design
switch mode power supply - Is there an industry-wide name for anti-parallel diodes across an IGBT module's collector and emitter? - Electrical Engineering Stack Exchange
a) Insulated-gate bipolar transistor (IGBT) and anti-parallel... | Download Scientific Diagram
How advanced IGBT gate drivers simplify high-voltage, high-current inverters - Power Electronic Tips
Figure 3 from Interaction between IGBT, diode and parasitic inductances during short-circuit type 3 | Semantic Scholar
IKQ75N120CH3 - Infineon Technologies
7: a) IGBT symbol; b) IGBT with antiparallel diode | Download Scientific Diagram
What is the use of the diode connected anti parallel to the gate resistance in the general MOSFET/IGBT gate driver circuit? - Electrical Engineering Stack Exchange
Why are diodes connected in antiparallel in IGBT and MOSFET? - Quora
Why are diodes connected anti-parallel across the MOSFET or IGBT in Inverter Module? | ResearchGate
What is the use of the fourth leg, the one with igbt in series with the diode, in the infineon power module? - Electrical Engineering Stack Exchange
Figure 14 | Comparative study of semiconductor power losses between CSI-based STATCOM and VSI-based STATCOM, both used for unbalance compensation | SpringerLink
Paralleling insulated-gate bipolar transistors in the H-bridge structure to reduce current stress | SpringerLink
Paralleling of IGBTs and diodes of one power module can push power capability - EE Times
