NSM Archive - Diamond (C) - Band structure and carrier concentration
Interface-induced lateral anisotropy of semiconductor heterostructures M.O. Nestoklon, Ioffe Physico-Technical Institute, St. Petersburg, Russia JASS ppt download
PDF) Energy Storage Capacitor Cell with Semiconductor Switches
A. F. Ioffe Semiconductor Thermoelements And Thermoelectric Cooling Infosearch ( 1957)
On the Band Structure of Ultrathin Layer Semiconductor Superlattices
Heterojunctions based on Silicon Carbide
ATE Central - Semiconductors on NSM
Structural and Optical Properties of Alternately-Strained ZnSxSe1−x/CdSe Superlattices with E ective Band-Gap 2.5 2.6 eV
Semiconductor Parameters | PDF | Band Gap | Electrical Resistivity And Conductivity
PDF) A general simulation procedure for the electrical characteristics of Metal-Insulator-Semiconductor tunnel structures
Director of Ioffe Institute: “Science сannot exist in isolation”
NSM Archive - Band structure and carrier concentration of Silicon (Si)
Optical trapping with Bessel beams generated from semiconductor lasers
New Semiconductor Materials. Characteristics and Properties
MRS Internet Journal Research Nitride Semiconductor
Development of detectors based on binary semiconductors in Ioffe Physico-Technical Institute
Band structure and carrier concentration of Indium Arsenide (InAs)
SEMICONDUCTORS AND DIELECTRICS
The calculated Ioffe-Regel critical density of Si- MOSFET as a function... | Download Scientific Diagram
Optimization of parameters of a structured semiconductor microchannel and those of increasing single-electron pulse level
A. F. Ioffe Semiconductor Thermoelements And Thermoelectric Cooling Infosearch ( 1957)
Interface-induced lateral anisotropy of semiconductor heterostructures M.O. Nestoklon, Ioffe Physico-Technical Institute, St. Petersburg, Russia JASS ppt download
Handbook Series on Semiconductor Parameters : ALUMINIUM GALLIUM ARSENIDE
Effect of uniaxial deformation on electrophysical parameters of 6<Emphasis Type="Italic">H</Emphasis>-SiC
