Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes | SpringerLink
Cut a) and top view b) of the structure of an MPS-Diode. In b) Black:... | Download Scientific Diagram
Advantages of the 1200 V SiC Schottky Diodes with MPS Design | Mouser
Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model - Li - 2020 - IET Power Electronics - Wiley Online Library
SiC Schottky Diode Device Design: Characterizing Performance & Reliability
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes | HTML
Figure 1 from Comparative study of contact topographies of 4.5kV SiC MPS diodes for optimizing the forward characteristics | Semantic Scholar
SiC Schottky Diode Device Design: Characterizing Performance & Reliability
Ruggedness of 1200 V SiC MPS diodes - ScienceDirect
Advantages of the 1200 V SiC Schottky Diode with MPS Design - Technical Articles
Improved JBS structure to reduce the leakage current and increase the surge current capability | Toshiba Electronic Devices & Storage Corporation | Americas – United States
Energies | Free Full-Text | Promise and Challenges of High-Voltage SiC Bipolar Power Devices | HTML
A New 1200V SiC MPS Diode with Improved Performance and Ruggedness | Scientific.Net
Control of pn-junction turn-on voltage in 4H-SiC merged PiN Schottky diode
Design and Optimization of Silicon Carbide Schottky Diodes - Power Electronics News
Advantages of the 1200 V SiC Schottky Diode with MPS Design
1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability
Reverse Characteristic Model of SiC MPS Diode | SpringerLink