Frontiers | Low-power flexible organic memristor based on PEDOT:PSS/pentacene heterojunction for artificial synapse
Line Edge Roughness (LER) correlation and dielectric reliability with Spacer-Defined Double Patterning (SDDP) at 20nm half pitch | Semantic Scholar
RSC_TC_vol_iss_D1TC90080C 5027..5035
Tuning Ambipolarity of the Conjugated Polymer Channel Layers of Floating‐Gate Free Transistors: From Volatile Memories to Artificial Synapses - Yang - Advanced Science - Wiley Online Library
ENABLING ADVANCED CHIP MANUFACTURING WITH NEW MATERIALS
Figure 1 from Line Edge Roughness (LER) correlation and dielectric reliability with Spacer-Defined Double Patterning (SDDP) at 20nm half pitch | Semantic Scholar
Flexible Artificial Sensory Systems Based on Neuromorphic Devices | ACS Nano
Nanomaterials | Free Full-Text | Artificial Synapse Consisted of TiSbTe/SiCx:H Memristor with Ultra-high Uniformity for Neuromorphic Computing | HTML
Energies | Free Full-Text | Medium-Term Hydropower Scheduling with Variable Head under Inflow, Energy and Reserve Capacity Price Uncertainty | HTML
Intrinsically stretchable carbon nanotube synaptic transistors with associative learning ability and mechanical deformation response - ScienceDirect
Figure 1 from Integration of 20nm half pitch single damascene copper trenches by spacer-defined double patterning (SDDP) on metal hard mask (MHM) | Semantic Scholar
Line Edge Roughness (LER) correlation and dielectric reliability with Spacer-Defined Double Patterning (SDDP) at 20nm half pitch | Semantic Scholar
Recent progress in optoelectronic neuromorphic devices